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                             BYV25FX-600 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 7 March 2011 2 of 11 NXP Semiconductors BYV25FX-600 Enhanced ultrafast power diode 2. Pinning information 3. Ordering information 4. Limiting values Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode SOD113 (TO-220F) 2 A anode mb n.c. mounting base; isolated 21 mb A 001aaa020 K Table 3. Ordering information Type number Package Name Description Version BYV25FX-600 TO-220F plastic single-ended package; isolated heat sink mounted; 1 mounting hole; 2-lead TO-220 "full pack" SOD113 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current square-wave pulse; δ = 0.5 ; Th ≤ 97 °C; see Figure 1; see Figure 2 -5A IFRM repetitive peak forward current square-wave pulse; δ =0.5; tp = 25 μs; Th ≤ 97 °C -10A IFSM non-repetitive peak forward current tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; see Figure 3 -60A tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; see Figure 3 -66A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C |